ultrafast switching rectifier voltage - 50 to 1000 volts current - 1.0 ampere features ? plastic package has underwriters laboratory fla m e retardant e po x y molding c opo u nd ? ? 1.0 a m pere operation at ta=55 with no ther m al runaway ? ? u ltra f ast switching f or high e ff iciency h igh? ? pbfree product at available : 99% mechanica l data ? case : molded plastic, do-41 ? terminals: ax ial leads, solderable per mil-std-202, method 208 ? polarity : band denotes cathode ? m o u nting position : a ny ? w eight: 0.013 ounce, 0.3 gram maximum ratings and ele ctrica l characteristics r atings at 25 j ambient temperature unless otherwise specified. single phase, hal f wave, 60 hz, resistive or inductive load . UF100 uf101 uf102 uf104 uf106 uf108 uf1010 units 50 100 200 400 600 800 1000 v 35 70 140 280 420 560 700 v 50 100 200 400 600 800 1000 v 1.0 a 30.0 a 1.00 1.30 1.50 1.70 v 5 100 a a 17.0 pf 60.0 reverse recovery time i f =.5a , i r =1a , i rr =.25a 50 75 ns operating and storage temperature range -55 to +150 notes: 1. measured at 1 mhz and applied reverse voltage o f 4.0 vdc 2. thermal resistance from junction to ambient and from j unction to lead length 0.375?(9.5mm) p .c.b. mounted .034 (.86) .028 (.71) .205 (5.2) .160 (4.1) .107 (2.7) .080 (2.0) dia. dia. do-41 unit:inch (mm) 1.0 (25.4) min. 1.0 (25.4) min. data sheet UF100~uf1010 semiconductor http : //www.yeashin.co m 1 rev.02 20110725 flammability classification 94v-o utilizing class passivaeed jumction in do-41 package exceeds environmental standards at terminals temperature soldering: 260 c c sn above meet rohs environment substance directive request c characteristics m a x i mum recurrent peak reverse v oltage maxi mum rms voltage m a x i mum dc b locking voltage m a x i mum a verage forward r ecti f ied cu rrent @t l =75 c peak for ward su rge cu rrent 8.3ms single half sine- wave super imposed on rated load (jedec method) m a x i mum f orward v oltage at 1.0a dc m a x i mum dc reverse cu r rent @tj =25 at rated dc b locking voltage @tj =100 c c m a x i mum reverse recovery time (note 1) typical junction resistance(note 2)r ja tstg t rr r jl c j i r symbol c/w vf c
rating and characteristic curves note:1.rise time = 7ns max. in p ut im p edance = 1 me g ohm. 22 p f 2.rise time = 10ns max. source im p edance = 50 ohms t rr +0.5a 0 -0.25 -1.0 set time 1cm base for 50 ns/cm fig. 1-reverse recovery time characteristic and test circuit diagram 10 1 0.1 0.01 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 uf1010 tj = 25 UF100 typical forward voltage-vfm ( v p k ) 1.2 1.0 0.8 0.6 0.4 0.2 0 25 50 75 100 125 150 175 single phase half wave 60hz resisstive or inductive load .375" lead lengths ambient temperature, fig. 2-forward characteristics fig. 3-forward current derating curve 100 10 1 0.1 1 10 100 tj = 25 f = 1.0mhz vsig = 50m vp-p reverse voltage, volts 35 30 25 20 15 10 5 .1 .5 1 2 5 10 20 50 100 200 500 1000 number of cycles at 60hz fig. 4-typical junction capacitance fig. 5-peak forward surge current ifm, apk verage forward current, amp junction capacitance, pf forward surge current, amperes UF100~uf1010 http://www.yeashin.com 2 rev.02 20110725 c c c
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